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| Rev 1: Oct 2004 AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch. AO8701L ( Green Product ) is offered in a lead-free package. Features VDS (V) = -30V ID = -4.2A RDS(ON) < 50m (VGS = 10V) RDS(ON) < 65m (VGS = 4.5V) RDS(ON) < 120m (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D K D S S G 1 2 3 4 8 7 6 5 K A A A G S A TSSOP-8 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage TA=25C Continuous Drain CurrentA Pulsed Drain Current B MOSFET -30 12 -4.2 -3.5 -30 Schottky Units V V A VGS TA=70C ID IDM VKA TA=25C A Schottky reverse voltage Continuous Forward Current Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient C A B TA=70C TA=25C TA=70C IF IFM PD TJ, TSTG Symbol RJA RJL RJA RJL 1.4 1 -55 to 150 Typ 73 96 63 75 97 63 30 3 2 40 1.4 1 -55 to 150 Max 90 125 75 90 125 75 V A W C Units C/W Steady-State Steady-State t 10s Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics Schottky Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C A A C/W Alpha & Omega Semiconductor, Ltd. AO8701, AO8701L Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-10V, ID=-4.2A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-5A 7 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 54 82 11 -0.75 -1 -2.2 954 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 115 77 6.1 9.4 VGS=-4.5V, VDS=-15V, ID=-4A 2 3 6.3 VGS=-10V, VDS=-15V, RL=3.6, RGEN=6 IF=-4A, dI/dt=100A/s 3.2 38.2 12 20.2 11.2 0.45 0.007 3.2 12 37 0.5 0.05 10 20 pF mA -0.7 -25 43 50 75 65 120 -1 Min -30 -1 -5 100 -1.3 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/s IF=1.0A VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VR=15V SCHOTTKY PARAMETERS VF Forward Voltage Drop Irm CT Maximum reverse leakage current Junction Capacitance A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8701, AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 -10V 20 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 120 100 RDS(ON) (m) 80 60 40 VGS=-10V 20 0 2 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 190 170 150 RDS(ON) (m) 130 110 90 70 50 30 25C 125C -IS (A) ID=-2A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 25C 125C VGS=-4.5V Normalized On-Resistance 1.6 -2.5V -4.5V -3V -ID (A) 6 -ID(A) 4 2 0 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics 125C 10 VDS=-5V 8 VGS=-2V 25C VGS=-2.5V 1.4 ID=-5A VGS=-4.5V VGS=-10V 1.2 VGS=-2.5V ID=-2A 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E-06 10 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.0 0.2 0.6 0.8 1.0 1.2 0 IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES0.4 ASSUME ANY LIABILITY ARISING 2 4 6 8 10 COMPONENTS NOT -VSD (Volts) -VGS (Volts) ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OUT OF SUCH APPLICATIONS OR USES OF Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. NOTICE. FUNCTIONS AND RELIABILITY WITHOUT Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO8701, AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=-15V ID=-4A Capacitance (pF) 1200 1000 800 600 400 Coss Crss Ciss 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 0.1s 100s 1ms 10ms 10s Power (W) 40 TJ(Max)=150C TA=25C -ID (Amps) 10.0 30 20 1.0 1s 10s DC 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 0.00001 0.0001 0.001 0.01 10 1000 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT 0.1 AUTHORIZED.1 AOS DOES NOT ASSUME100 LIABILITY ARISING ANY Pulse Width (s) OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Figure 11: Normalized Maximum Transient Thermal Impedance FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8701,AO8701L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125C Capacitance (pF) 250 f = 1MHz 1 IF (Amps) 200 150 100 50 25C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (Volts) Figure 12: Schottky Forward Characteristics 0 0 5 10 15 20 25 30 VKA (Volts) Figure 13: Schottky Capacitance Characteristics 0.1 0.01 0.7 Leakage Current (mA) 0.6 0.5 0.4 IF=1A 0.3 0.2 0.1 0 25 50 75 100 125 Temperature (C) 150 175 100 IF=3A 10 1 VR=30V 0.1 0.01 0.001 0 25 50 75 100 125 150 175 Temperature (C) Figure 15: Schottky Leakage current vs. Junction Temperature VF (Volts) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Schottky Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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